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FZT948TA 데이터 시트보기 (PDF) - Diodes Incorporated.

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FZT948TA
Diodes
Diodes Incorporated. 
FZT948TA Datasheet PDF : 7 Pages
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FZT948
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCER
BVCEO
BVEBO
Min
Typ
-40
-55
-40
-55
-20
-30
-7
-8
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICER
Emitter Cut-Off Current
IEBO
100
100
DC Current Transfer Static Ratio (Note 9)
hFE
75
60
15
Collector-Emitter Saturation Voltage (Note 9)
VCE(SAT)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
VBE(SAT)
VBE(ON)
Transitional Frequency (Note 9)
fT
Output Capacitance
Switching Time
COBO
tON
tOFF
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
200
200
160
130
40
-60
-110
-200
-360
-1,050
-870
80
163
120
126
Max
-50
-1
-50
-1
-10
300
-130
-180
-280
-450
-1,200
-1,050
Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
mV
mV
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
IE = -100µA
VCB = -30V
VCB = -30V, TA = +100°C
VCE = -30V, R ≤ 1kΩ
VCE = -30V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -1V
IC = -1A, VCE = -1V
IC = -5A, VCE = -1V
IC = -10A, VCE = -1V
IC = -20A, VCE = -2V
IC = -0.5A, IB = -10mA
IC = -2A, IB = -200mA
IC = -4A, IB = -400mA
IC = -6A, IB = -250mA
IC = -5A, IB = -300mA
IC = -6A, VCE = -1V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -4A,
-IB1 = IB2 = -400mA
FZT948
Document number: DS33189 Rev. 4 - 2
4 of 7
www.diodes.com
April 2017
© Diodes Incorporated

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