HZU6.2L 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HZU6.2L

Silicon Epitaxial Planar Zener Diode for Surge Absorb

Hitachi -> Renesas Electronics 

HZU6.2L

Absolute Maximum Ratings (Ta = 25°C)

Item

Power dissipation

Junction temperature

Storage temperature

Note 1. See Fig.2.

Symbol

Pd *1

Tj

Tstg

Value

Unit

150

mW

150

°C

-55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Zener voltage

VZ

Reverse current

IR

Dynamic resistance r d

5.80 





6.60 V

100 nA

30 Ω

IZ = 5 mA, 40ms pulse

VR = 5.0V

IZ = 5 mA

2

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