MJ11011 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJ11011

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

MJ11011

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0

-60

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= -20A; IB= -0.2A

VBE(sat)-2 Base-Emitter Saturation Voltage

ICER

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -30A; IB= -0.3A

VCE=-60V; RBE=1kΩ

VCE=-60V; RBE=1kΩ; TC=150℃

VCE= -50V; IB= 0

-3.0

V

-4.0

V

-3.5

V

-5.0

V

-1.0

-5.0

mA

-1.0 mA

IEBO

Emitter Cutoff Current

hFE-1

DC Current Gain

hFE-2

DC Current Gain

VEB= -5V; IC= 0

IC= -20A, VCE= -5V

IC= -30A, VCE= -5V

1000

200

-5.0 mA

isc Website：www.iscsemi.cn

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