MJD32C 데이터 시트보기 (PDF) - Tiger Electronic
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MJD32C Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Complementary Silicon Power Ttransistors
Product specification
MJD31C / 32C
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
±100 V
Collector-Emitter Voltage
VCEO
±100 V
Emitter-Base Voltage
VEBO
±6.0 V
Collector Current
IC
±3.0 A
Base Current
IB
±1.0 A
Total Dissipation at
Ptot
20 W
Max. Operating Junction Temperature
Tj
150 oC
1：B
2：C
Storage Temperature
Tstg -55~150 oC
3：E
TO-252
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Min. Typ. Max. Unit
Collector Cut-off Current
ICEO VCB= ±100V, IE=0
—
— ±10 uA
Emitter Cut-off Current
IEBO VEB= ±5.0V, IC=0
—
— ±10 uA
Collector-Emitter Sustaining Voltage VCEO IC= ±10mA, IB=0
±100 —
—
V
DC Current Gain
hFE(1) VCE= ±4.0V, IC= ±1.0A
30
—
—
hFE(2) VCE= ±4.0V, IC= ±3.0A
10
—
60
Collector-Emitter Saturation Voltage VCE(sat) IC= ±3.0A,IB= ±375mA
—
— ±1.2 V
Base-Emitter on Voltage
VBE(on) VCE= ±4.0V,IC= ±3.0A
—
— ±1.8 V
Current Gain Bandwidth Product
fT
VCE= ±10V,IC= ±500mA
3.0
—
— MHz
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