MJB45H11T4(2003) 데이터 시트보기 (PDF) - ON Semiconductor
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MJB45H11T4 Datasheet PDF : 6 Pages
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MJB44H11 (NPN), MJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
VCEO(sus)
80
−
−
Vdc
ICES
−
−
10
µA
IEBO
−
−
50
µA
VCE(sat)
−
−
1.0
Vdc
VBE(sat)
−
−
1.5
Vdc
hFE
60
−
−
−
40
−
−
Ccb
MJB44H11
MJB45H11
pF
−
130
−
−
230
−
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
fT
MJB44H11
MJB45H11
MHz
−
50
−
−
40
−
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJB44H11
MJB45H11
td + tr
ns
−
300
−
−
135
−
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
ts
MJB44H11
MJB45H11
ns
−
500
−
−
500
−
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
tf
MJB44H11
MJB45H11
ns
−
140
−
−
100
−
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