MMBD101 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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MMBD101

Schottky Barrier Diodes

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diodes

MMBD101

FEATURES

 Low noise figure -6.0dB @1.0GHz.

Pb

 Surface mount package ideally suited Lead-free

for automatic insertion.

 Very low capacitance –less than 1.0pF @zero volts.

 High forward conductance -0.5volts (typ.) @IF=10mA.

 MSL1.

APPLICATIONS

 High speed switching.

SOT-23

ORDERING INFORMATION

Type No.

MMBD101

Marking

4M

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Limits

Unit

DC Reverse Voltage

VR

7.0

V

Power Dissipation

Pd

225

mW

Operating Junction Temperature Range

Tj

150

℃

Storage Temperature Range

TSTG

-55 to +150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol Min. TYP. MAX UNIT Test Condition

Reverse Breakdown Voltage

V(BR)R

7.0 10

V

IR=10μA

Forward Voltage

VF

0.5 0.6 V

IF=10mA

Reverse Current

IR

Diode Capacitance

CT

0.02 0.25 μA

0.88 1.0 pF

VR=3.0V

VR=0V,f=1MHz

C132

Rev.A

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