NTD4804NT4G 데이터 시트보기 (PDF) - ON Semiconductor
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NTD4804NT4G Datasheet PDF : 8 Pages
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NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
6000
Ciss
5000
TJ = 25°C
4000
Ciss
3000
2000 Crss
1000
Coss
0
VDS = 0 V VGS = 0 V
Crss
15 10 5 0 5 10 15 20 25 30
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100
tr
td(off)
tf
td(on)
10
1
1
1000
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
10 ms
100
100 ms
10
1
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 ms
10 ms
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
4
Q1
3
QT
Q2
2
1
ID = 30 A
TJ = 25°C
0
0
5
10
15
20
25
30
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
500
ID = 30 A
400
300
200
100
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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