PBSS8110D 데이터 시트보기 (PDF) - Philips Electronics
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PBSS8110D Datasheet PDF : 12 Pages
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Philips Semiconductors
PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to ambient in free air
Rth(j-s)
thermal resistance from junction to
soldering point
in free air
Typ
[1] 416
[2] 227
[3] 178
[1] 83
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad.
Unit
K/W
K/W
K/W
K/W
103
Zth
(1)
(K/W) (2)
(3)
102 (4)
(5)
(6)
(7)
10 (8)
(9)
1 (10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
Mounted on FR4 PCB; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig 2. Transient thermal impedance as a function of pulse time; typical values.
001aaa494
102
103
tp (s)
9397 750 12566
Product data sheet
Rev. 01 — 23 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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