2SB1508 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1508 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1508
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V,BH;CEO Collector-Emitter Breakdown Voltage lc=-1rnA; Ree-= =»
V(HRj(:BO Collector-Base Breakdown Voltage
ic--1mA; I^O
V(B«)EBO Emitter-Base Breakdown Voltage
!E=-1mA lc= 0
VcF(sai) Collector-Emitter Saturation Voltage lc= -6A: IB= -0.3A
IC.BO
Collector Cutoff Current
VCB= -40V. IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; lc= 0
hpE-i
DC Current Gam
\C- -1A, Vc== -2V
h=E2
DC Current Gain
lc= -5A, VCE- -2V
tr
Current-Gain—Bandwidth Product
IC=-1A: VCE=-5V
Switching Times
^on
Turn-on Time
t*.
Storage Time
tr
Fall Time
lr.= -5A. R.= 40 ,
IB-= -IB?- -0.5A, VCc
20V
WIN TYP. MAX UNIT
-50
V
-60
V
h
-6
V
-0.5
V
-100 M A
-100 M A
70
280
i
30
10
MHz
0.2
Ms
0.4
MS
01
MS
• hpE-1 Classifications
Q
R
70-140 100-200 140-280
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