2SC5621 데이터 시트보기 (PDF) - Isahaya Electronics
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2SC5621 Datasheet PDF : 5 Pages
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DESCRIPTION
2SC5621 is a super mini package resin sealed silicon NPN
epitaxial transistor.It is designed for high frequency
application.
FEATURE
・High gain bandwidth product.
fT=4.5GHz
・High gain,low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5621
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
1.6
0.4 0.8 0.4
U n i t :mm
1
3
2
APPLICATION
For TV tuners,high frequency amplifier,celluar phone
system.
MAXIMUM RATINGS (Ta=25℃)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
20
12
3
50
100
+125
-55~+125
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
I CBO
I EBO
hFE
fT
Cob
S21 2
NF
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
VCB=10V, I E=0mA
VEB=1V, IC=0mA
VCE=5V, I C=20mA
VCE=5V, I E=20mA
VCB=5V, I E=0mA, f =1MHz
VCE=5V, I C=20mA, f =1GHz
VCE=5V, I C=5mA, f =1GHz
TERMINAL CONNECTOR
1 : BASE
2 : EMITTER
3 : COLLECTOR
EIJA:
MARKING
GW
TYPE NAME
hFE ITEM
Limits
Unit
Min
Typ
Max
1.0
μA
1.0
μA
50
250
4.5
GHz
1.0
pF
7.5
9.0
dB
1.5
dB
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