2SD2142 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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2SD2142 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SD2142
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
40
-
-
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
32
-
-
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
12
-
-
V
Collector cut-off current
Emitter cut-off current
ICBO
VCB=30V,IE=0
IEBO
VEB=12V,IC=0
-
- 0.1 μA
-
- 0.1 μA
DC current gain
hFE
VCE=3V,IC=100mA
5000 -
-
-
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 0.2mA
-
- 1.4
V
Output capacitance
Transition frequency
Cob
VCB=10V,IE=0,f=1MHz
- 2.5 -
pF
fT
VCE=5V, IC= 10mA
f=100MHz
- 200 -
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C249
Rev.A
www.gmicroelec.com
2
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