This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOSFETs (Small Signal)
2SK0665G
Silicon N-channel MOSFET
For switching circuits
■ Features
• High-speed switching
/ • Small drive current owing to high input inpedance
• High electrostatic breakdown voltage
e e. ■ Absolute Maximum Ratings Ta = 25°C
c tag Parameter
Symbol Rating
Unit
n d le s Drain-source voltage
yc Gate-source voltage (Drain open)
a e lifec Drain current
ct Peak drain current
n u du Power dissipation
Pro Channel temperature
te tin four Storagetemperature
VDS
20
V
VGSO
8
V
ID
100
mA
IDP
200
mA
PD
150
mW
Tch
150
°C
Tstg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: 3O
• Pin Name
1: Gate
2: Source
3: Drain
■ Internal Connection
R1
D
G
R2
S
Mainisctoinuedninlcalnueddesmfaaoiilnnlottewenniinasagncncocenettitynypupueeeeddttyyppoeeudt latesnticin.cfoo.rjmp/aetnio/n. ■ Electrical Characteristics Ta = 25°C ± 2°C
on p m d d ntin ab aso Parameter
Symbol
Conditions
isc ne co RL an Drain-source surrender voltage
/D pla dis g U n.p Drain-source cutoff current
D e in ico Gate-source cutoff current
tenanc follow .sem Gate threshold voltage
in it w Forward transfer admittance
Ma e vis ://ww Drain-source ON resistance
as ttp Output voltage high-level
Ple h Output voltage low-level
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)
VOH
VOL
ID = 100 µA, VGS = 0
VDS = 10 V, VGS = 0
VGS = 8 V, VDS = 0
ID = 100 µA, VDS = VGS
ID = 20 mA, VDS = 5 V, f = 1 kHz
ID = 20 mA, VGS = 5 V
VDD = 5 V, VGS = 1 V, RL = 200 Ω
VDD = 5 V, VGS = 5 V, RL = 200 Ω
Min Typ Max Unit
20
V
10
µA
40
80
µA
1.5
3.5
V
20
mS
50
Ω
4.5
V
1.0
V
Input resistance *1
R1+R2
100
200 kΩ
Turn-on time *2, 3
ton
VDD = 5 V, VGS = 0 V to 5 V, RL = 200 Ω
1.0
µs
Turn-off time *2, 3
toff
VDD = 5 V, VGS = 5 V to 0 V, RL = 200 Ω
1.0
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
Note) The part number in the parenthesis shows conventional part number.
SJF00062AED
1