DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RG4J(2003) 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명
상세내역
제조사
RG4J
(Rev.:2003)
Vishay
Vishay Semiconductors 
RG4J Datasheet PDF : 5 Pages
1 2 3 4 5
RG4A to RG4J
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance 1)
Symbol
Value
Unit
RθJA
22
K/W
1) Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, with both leads attached to heat sink
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous forward IF = 3.0 A
voltage
Maximum reverse current
VR = VRRM
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical junction capacitance
VR = 4.0 V, f = 1 MHz
Part
RG4A
RG4B
RG4D
RG4G
RG4J
Symbol
VF
IR
trr
trr
trr
trr
trr
CJ
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Typ.
Max
Unit
1.3
V
5.0
µA
150
ns
150
ns
150
ns
150
ns
250
ns
50
pF
4.0
Resistive or Inductive Load
3.0
200
TA = 55°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
2.0
1.0
0.375" (9.5mm) Lead Length
0
0 25 50 75 100 125 150 175
grg4a_01
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
10
1
10
100
grg4a_02
Number of Cycles at 60 HZ
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 86076
Rev. 2, 28-Jan-03

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]