ATF-551M4-TR1 데이터 시트보기 (PDF) - Avago Technologies
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ATF-551M4-TR1
Avago Technologies
ATF-551M4-TR1 Datasheet PDF : 23 Pages
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ATF-551M4 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin max.
TCH
TSTG
θjc
Parameter
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Gate Current[5]
Total Power Dissipation[3]
RF Input Power
(Vd=2.7V, Id=10mA)
(Vd=0V, Id=0mA)
Channel Temperature
Storage Temperature
Thermal Resistance[4]
Units
V
V
V
mA
mA
mW
dBm
dBm
°C
°C
°C/W
Absolute Maximum
5
-5 to +1
-5 to +1
100
1
270
10
10
150
-65 to 150
240
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 4.2 mW/°C for TL > 85°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. Device can safely handle +10 dBm RF Input Power provided IGS is
limited to 1 mA. IGS at P1dB drive RF level is bias circuit dependent.
See applications section for additional information.
Product Consistency Distribution Charts [6]
70
60
50
40
30
20
10
0
0 12 3 45
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
0.7 V
0.6 V
0.5 V
0.4 V
0.3 V
67
180
150
160
Cpk = 1.64
Cpk = 2.85
Cpk = 2.46
Stdev = 0.19
150
Stdev = 0.25
Stdev = 0.06
120
120
120
-3 Std
+3 Std
90
-3 Std
90
+3 Std
80
60
60
40
30
30
0
0
0
15
16
17
18
19
22
23
24
25
26
0.29
0.49
0.69
0.89
1.09
GAIN (dB)
OIP3 (dBm)
NF (dB)
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between
an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual
measurements.
2
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