isc N-Channel MOSFET Transistor
·FEATURES
·With TO-252( DPAK ) packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·PFC stages
·LED backlighting
·Power supply
·Switching applications
INCHANGE Semiconductor
AOD482
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
TC=100℃
Drain Current-Single Pulsed
±20
32
22
70
PD
Total Dissipation
100
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
1.5
50
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
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