EMIF09-02726SX 데이터 시트보기 (PDF) - STMicroelectronics
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EMIF09-02726SX Datasheet PDF : 12 Pages
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EMIF09-02726Sx
Fig. 1: Peak power dissipation versus initial junc-
tion temperature.
Fig. 2: Peak pulse power versus exponentialpulse
duration (Tj initial=25°C).
Ppp[Tj initial]/Ppp[Tj initial=25°C]
1.1
Ppp(W)
2000
1.0
1000
0.9
0.8
0.7
0.6
0.5
100
0.4
0.3
0.2
0.1
Tj initial(°C)
0.0
0
25 50 75 100 125 150
10
1
tp(µs)
10
100
Fig. 3: Clamping voltage versus peak pulse cur-
rent (Tj initial=25°C).
Rectangular waveform: tp = 2.5µs
Ipp(A)
30.0
tp=2.5µs
10.0
Output Vcl
Input Vcl
1.0
Vcl(V)
0.1
5 6 7 8 9 10 11 12 13 14 15
Fig. 4: Input capacitance versus reverse applied
voltage (typical values).
C(pF)
220
200
F=1MHz
Vosc=30mV
180
160
140
120
100
1
VR(V)
2
5
10
Fig. 5: Relative variation of leakagecurrent versus
junction temperature (typical values).
Fig. 6: Peak forward voltage drop versus peak for-
ward current (typical values).
Rectangular waveform: tp = 2.5µs
IR[Tj] / IR[Tj=25°C]
3.0
IFM(A)
5.00
2.5
1.00
2.0
1.5
1.0
0.10
0.5
Tj(°C)
VFM(V)
0.0
25
50
0.01
75
100
125
150
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
3/12
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