2N6264 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6264 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω
VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 2V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 130V; IB= 0
VCE= 150V; VBE= -1.5V
VCE= 150V; VBE= -1.5V, TC=150℃
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 0.2A ; VCE= 4V
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 120V,t= 1.0s,Nonrepetitive
2N6264
MIN MAX UNIT
150
V
160
V
170
V
0.5
V
1.5
V
1.0
mA
0.05
1.0
mA
0.2
mA
20
60
5
0.2
MHz
0.417
A
SPTECH website：www.superic-tech.com
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