2N5737 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N5737

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min.)

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max.)@ IC= -5A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=100℃

TJ

Junction Temperature

-4

A

50

W

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-a Thermal Resistance,Junction to Ambient 0.5 ℃/W

SPTECH website：www.superic-tech.com

2N5737

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