2N5629 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N5629 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·High DC Current Gain-hFE=25(Min)@IC = 8A
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC = 10A
·Complement to Type 2N6029
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25℃ 200
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 ℃/W
SPTECH website：www.superic-tech.com
2N5629
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