2N6537 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6537

Silicon NPN Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

2N6537

DESCRIPTION

·High DC Current Gain-

: hFE= 1000(Min.)@IC= 3A

·Collector-Emitter Sustaining Voltage-

:VCEO(SUS)= 120V(Min.)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max.)@ IC= 3A

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCER

Collector-Emitter Voltage RBE= 100Ω

120

V

VCEV

Collector-Emitter Voltage VBE= -1.5V

120

V

VCEO Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

8

A

ICM

Collector Current-peak

15

A

IB

Base Current

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

250

mA

36

W

150

℃

Tstg

Storage Temperature Range

-65~+150 ℃

SPTECH website：www.superic-tech.com

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