2N6534 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6534 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2N6534
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on)-1 Base-Emitter On Voltage
IC= 5A; VCE= 3V
V BE(on)-2 Base-Emitter On Voltage
IC= 8A ; VCE= 3V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 3V
hFE-2
DC Current Gain
IC= 8A ; VCE= 3V
COB
Output Capacitance
VCB= 10V;IE= 0; f= 1MHz
MIN TYP. MAX UNIT
80
V
2.0
V
3.0
V
2.8
V
4.5
V
1.0 mA
5
mA
1000
10000
100
5000
200 pF
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