2N6036 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6036 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Darlington Power Transistor
2N6036
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0
-80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
-3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -40mA
-4.0
V
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -3V
-2.8
V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
VCE= -80V; IB= 0
VCE=-80V;VBE(off)=-1.5V;
VCB=-80V;VBE(off)=-1.5V;TC= 125℃
VCB= -80V; IE= 0
-0.1
mA
-0.1
-0.5
mA
-0.5
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE -1
DC Current Gain
IC= -0.5A ; VCE= -3V
500
hFE -2
DC Current Gain
IC= -2A ; VCE= -3V
750 15000
hFE -3
DC Current Gain
IC= -4A ; VCE= -3V
100
COB
Output Capacitance
IE=0; VCB= -10V; f= 0.1MHz
200
pF
SPTECH website：www.superic-tech.com
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