2N5627 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N5627

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A

VBE(sat) Base-Emitter Saturation Voltage

IC= -10A; IB= -1A

ICEO

Collector Cutoff Current

VCE= -100V; IB= 0

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -5A ; VCE= -5V

fT

Current-Gain—Bandwidth Product IC= -1A ; VCE= -10V

2N5627

MIN MAX UNIT

-100

V

-1.5

V

-2.2

V

-1.0

mA

-0.1

mA

-0.1

mA

30

90

40

MHz

SPTECH website：www.superic-tech.com

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