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BC807W 데이터 시트보기 (PDF) - Infineon Technologies
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BC807W
PNP Silicon AF Transistors
Infineon Technologies
BC807W Datasheet PDF : 5 Pages
1
2
3
4
5
BC807W, BC808W
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 1V
10
3
h
FE
5
100
˚
C
25
˚
C
-50
˚
C
10
2
5
10
1
5
EHP00216
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5V
10
3
MHz
f
T
5
EHP00210
10
2
5
10
0
10
-1
10
0
10
1
10
2
mA 10
3
Ι
C
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
),
h
FE
= 10
10
1
10
0
10
1
10
2
mA 10
3
Ι
C
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
),
h
FE
= 10
10
3
Ι
C
mA
10
2
5
150
˚
C
25
˚
C
-50
˚
C
EHP00214
10
3
Ι
C
mA
10
2
5
150
˚
C
25
˚
C
-50
˚
C
EHP00215
10
1
10
1
5
5
10
0
10
0
5
5
10
-1
0
1.0
2.0
3.0 V 4.0
V
BEsat
10
-1
0
5
0.2
0.4
0.6 V 0.8
V
CEsat
Nov-29-2001
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