FS30KMJ-3 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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FS30KMJ-3 Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 10V
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
150
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
66
86
—
69
90
—
0.99 1.29
—
38
—
—
3000
—
—
320
—
—
160
—
—
22
—
—
42
—
—
280
—
—
130
—
—
1.0
1.5
—
—
4.17
—
100
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
102
7
5
tw = 10ms
3
2
101
7
100ms
5
3
2
1ms
100
10ms
7
5
TC = 25°C
Single Pulse
DC
100ms
3
23
5 7 101 2 3
5 7 102 2 3
5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V 5V
4V
40
TC = 25°C
Pulse Test
30
3V
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
5V 4V
VGS = 10V
3V
1.6
PD = 30W
1.2
2.5V
20
10
PD = 30W
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
8
TC = 25°C
Pulse Test
4
2V
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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