APTM20DUM04G 데이터 시트보기 (PDF) - Microsemi Corporation
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APTM20DUM04G Datasheet PDF : 7 Pages
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Delay Times vs Current
120
100
80 VDS=133V
RG=1.2Ω
60 TJ=125°C
L=100µH
40
td(off)
td(on)
20
0
0 100 200 300 400 500 600
ID, Drain Current (A)
Switching Energy vs Current
8
VDS=133V
RG=1.2Ω
6 TJ=125°C
L=100µH
4
Eoff
Eon
2
Eoff
0
0 100 200 300 400 500 600
ID, Drain Current (A)
Operating Frequency vs Drain Current
350
VDS=133V
300
D=50%
250
RG=1.2Ω
TJ=125°C
200
TC=75°C
150
ZVS
ZCS
100
Hard
50
switching
0
50 100 150 200 250 300 350
ID, Drain Current (A)
APTM20DUM04G
Rise and Fall times vs Current
160
140
VDS=133V
R G=1.2Ω
120 TJ=125°C
tf
L=100µH
100
80
60
tr
40
20
0
0 100 200 300 400 500 600
ID, Drain Current (A)
Switching Energy vs Gate Resistance
12
VDS=133V
10
ID=372A
TJ=125°C
Eoff
L=100µH
8
6
Eon
4
2
0
2.5
5
7.5 10 12.5
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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