APTM08TDUM04PG 데이터 시트보기 (PDF) - Microsemi Corporation
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APTM08TDUM04PG Datasheet PDF : 6 Pages
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APTM08TDUM04PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current
VGS = 0V,VDS = 75V
VGS = 0V,VDS = 60V
Tj = 25°C
Tj = 125°C
100 µA
250
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 60A
4.2 4.5 mΩ
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = 1mA
2
4V
IGSS Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 60V
ID =120A
Inductive switching @ 125°C
VGS = 15V
VBus = 40V
ID = 120A
RG = 5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5Ω
Min Typ Max Unit
4530
1080
pF
450
153
25
nC
82
35
60
ns
100
65
290
µJ
317
319
µJ
336
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
Continuous Source current
(Body diode)
Tc = 25°C
Tc = 80°C
VSD Diode Forward Voltage
dv/dt Peak Diode Recovery X
VGS = 0V, IS = - 120A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 120A
VR = 40V
diS/dt = 100A/µs
Tj = 25°C
Tj = 25°C
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 120A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
Min Typ Max Unit
120 A
90
1.3 V
6 V/ns
100 200 ns
300
nC
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