APTM08TDUM04PG 데이터 시트보기 (PDF) - Microsemi Corporation
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APTM08TDUM04PG Datasheet PDF : 6 Pages
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Delay Times vs Current
120
100
td(off)
80 VDS=40V
RG=5Ω
60 TJ=125°C
L=100µH
40
td(on)
20
0
25 50 75 100 125 150 175 200
ID, Drain Current (A)
0.75
0.5
Switching Energy vs Current
VDS=40V
RG=5Ω
Eoff
TJ=125°C
L=100µH
Eon
0.25
Eon
0
25 50 75 100 125 150 175 200
ID, Drain Current (A)
Operating Frequency vs Drain Current
300
250
200
ZCS
150
ZVS
VDS=40V
100 D=50%
R G=5Ω
50 TJ=125°C
TC=75°C
Hard
switching
0
20 40 60 80 100 120
ID, Drain Current (A)
APTM08TDUM04PG
Rise and Fall times vs Current
120
VDS=40V
100 RG=5Ω
TJ=125°C
tf
80 L=100µH
tr
60
40
20
0
25 50 75 100 125 150 175 200
ID, Drain Current (A)
Switching Energy vs Gate Resistance
1.5
VDS=40V
ID=120A
TJ=125°C
1 L=100µH
Eoff
0.5
Eon
0
0 10 20 30 40 50 60
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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