DS2016R 데이터 시트보기 (PDF) - Maxim Integrated

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DS2016R

2k x 8 3V/5V Operation Static RAM

Maxim Integrated 

www.maxim-ic.com

DS2016

2k x 8 3V/5V Operation

Static RAM

FEATURES

§ Low-power CMOS design

§ Standby current

- 50nA max at tA = +25°C VCC = 3.0V

- 100nA max at tA = +25°C VCC = 5.5V

- 1µA max at tA = +60°C VCC = 5.5V

§ Full operation for VCC = 5.5V to 2.7V

§ Data retention voltage = 5.5V to 2.0V

§ Fast 5V access time

- DS2016-100 100ns

§ Reduced-speed 3V access time

- DS2016-100 250ns

§ Operating temperature range of -40°C to

+85°C

§ Full static operation

§ TTL compatible inputs and outputs over

voltage range of 5.5V to 2.7V

§ Available in 24-pin DIP and 24-pin SO

packages

§ Suitable for both battery operated and battery

backup applications

PIN ASSIGNMENT

A7 1

A6 2

A5 3

A4 4

A3 5

A2 6

A1 7

A0 8

DQ0 9

DQ1 10

DQ2 11

GND 12

24

VCC

23 A8

22 A9

21 WE

20 OE

19 A10

18 CE

17 DQ7

16 DQ6

15 DQ5

14 DQ4

13 DQ3

DS2016 24-Pin DIP (600mil)

DS2016R 24-Pin SO (300mil)

PIN DESCRIPTION

A0 to A10 - Address Inputs

DQ0 to DQ7 - Data Input/Output

CE

- Chip Enable Input

WE

- Write Enable Input

OE

- Output Enable Input

VCC

GND

- Power Supply Input 2.7V - 5.5V

- Ground

DESCRIPTION

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access

memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single

power supply with a voltage input between 2.7V and 5.5V. The chip enable input ( CE ) is used for device

selection and can be used in order to achieve the minimum standby current mode, which facilitates both

battery operated and battery backup applications. The device provides access times as fast as 100ns when

operated from a 5V power supply input and also provides relatively good performance of 250ns access

while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input

voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery

operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM

and is pin-compatible with ROM and EPROM of similar density.

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