UPA1770G 데이터 시트보기 (PDF) - Renesas Electronics

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UPA1770G

SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas Electronics 

PACKAGE DRAWING (Unit : mm)

Power SOP8

8

5

1

4

5.37 MAX.

1 : Source 1

2 : Gate 1

7, 8 : Drain 1

3 : Source 2

4 : Gate 2

5, 6 : Drain 2

6.0 ±0.3

4.4

0.8

1.27 0.78 MAX.

0.40

+0.10

–0.05

0.12 M

0.5 ±0.2

0.10

µ PA1770

EQUIVALENT CIRCUIT

(1/2 circuit)

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

6

Data Sheet G14055EJ1V0DS00

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