74LVC244A 데이터 시트보기 (PDF) - ON Semiconductor

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74LVC244A

Low-Voltage CMOS Octal Buffer

ON Semiconductor 

74LVC244A

AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)

−405C to +855C

−405C to +1255C

Symbol

Parameter

Conditions

Min Typ1 Max Min Typ1 Max Unit

tpd

Propagation Delay (Note 5)

nDn to nOn

VCC = 1.2 V

− 17.0 −

−

−

−

ns

VCC = 1.65 V to 1.95 V 1.5 6.4 13.7 1.5

− 15.8

VCC = 2.3 V to 2.7 V

1.0 3.4 7.1 1.0

−

8.2

VCC = 2.7 V

1.5 3.4 6.9 1.5

−

9.0

VCC = 3.0 V to 3.6 V

1.5 2.9 5.9 1.5

−

7.5

ten

Enable Time (Note 6)

nOE to nOn

VCC = 1.2 V

− 24.0 −

−

−

−

ns

VCC = 1.65 V to 1.95 V 1.5 7.0 17.3 1.5

− 20.0

VCC = 2.3 V to 2.7 V

1.5 3.9 9.5 1.5

− 11.0

VCC = 2.7 V

1.5 4.1 8.6 1.5

− 11.0

VCC = 3.0 V to 3.6 V

1.0 3.2 7.6 1.0

−

9.5

tdis

Disable Time (Note 7)

nOE to nOn

VCC = 1.2 V

−

9.0

−

−

−

−

ns

VCC = 1.65 V to 1.95 V 2.2 4.5 9.8 2.2

− 11.3

VCC = 2.3 V to 2.7 V

0.5 3.6 5.5 0.5

−

6.4

VCC = 2.7 V

1.5 3.3 6.8 1.5

−

8.5

VCC = 3.0 V to 3.6 V

1.5 3.1 5.8 1.5

−

7.5

tsk(0) Output Skew Time (Note 8)

−

−

1

−

−

1.5

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.

5. tpd is the same as tPLH and tPHL.

6. ten is the same as tPZL and tPZH.

7. tdis is the same as tPLZ and tPHZ.

8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25°C

Min Typ Max Unit

VOLP Dynamic LOW Peak Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

0.8

V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

0.6

VOLV Dynamic LOW Valley Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

−0.8

V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

−0.6

9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN Input Capacitance

VCC = 3.3 V, VI = 0 V or VCC

4

pF

COUT Output Capacitance

VCC = 3.3 V, VI = 0 V or VCC

5

pF

CPD

Power Dissipation Capacitance

(Note 10)

Per input; VI = GND or VCC

pF

VCC = 1.65 V to 1.95 V

6.4

VCC = 2.3 V to 2.7 V

9.6

VCC = 3.0 V to 3.6 V

12.5

10. CPD is used to determine the dynamic power dissipation (PD in mW).

PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where:

fi = input frequency in MHz; fo = output frequency in MHz

CL = output load capacitance in pF VCC = supply voltage in Volts

N = number of outputs switching

S(CL x VCC2 x fo) = sum of the outputs.

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