74LVC1G126(2010) 데이터 시트보기 (PDF) - Diodes Incorporated.

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74LVC1G126
(Rev.:2010)

SINGLE BUFFER GATE WITH 3-STATE OUTPUT

Diodes Incorporated. 

74LVC1G126

SINGLE BUFFER GATE WITH 3-STATE OUTPUT

Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)

Over recommended free-air temperature range (unless otherwise noted)

Symbol

Parameter

Test Conditions

Vcc

Min

Typ. Max Unit

IOH = -100μA

IOH = -4mA

VOH

High Level Output

Voltage

IOH = -8mA

IOH = -16mA

IOH = -24mA

IOH = -32mA

IOH = 100μA

IOH = 4mA

High-level Input

VOL Voltage

IOH = 8mA

IOH = 16mA

IOH = 24mA

IOH = 32mA

II Input Current

VI = 5.5V or GND

IOFF

Power Down Leakage

Current

VI or VO = 5.5V

1.65V to 5.5V

1.65V

2.3V

3V

4.5V

1.65V to 5.5V

1.65V

2.3V

VCC – 0.1

1.2

1.9

2.4

2.3

3.8

3V

4.5V

0 to 5.5V

0

V

0.1

0.45

0.3

V

0.4

0.55

0.55

± 5 μA

± 10 μA

IOZ

OFF State Leakage

Current

VO = 0 to 5.5V

3.6V

10 μA

ICC Supply Current

ΔICC

Additional Supply

Current

VI = 5.5V of GND

IO = 0

One input at VCC –0.6V

Other inputs at VCC or

GND

1.65V to 5.5V

3V to 5.5V

10 μA

500 μA

Ci Input Capacitance

VI = VCC – or GND

SOT25

θJA

Thermal Resistance

Junction-to-Ambient

SOT353

DFN1410

SOT25

θJC

Thermal Resistance

Junction-to-Case

SOT353

DFN1410

3.3

(Note 5)

(Note 5)

(Note 5)

(Note 5)

(Note 5)

(Note 5)

4

pF

204

oC/W

371

oC/W

430

oC/W

52

oC/W

143

oC/W

190

oC/W

Notes: 5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum

recommended pad layout.

74LVC1G126

Document number: DS32103 Rev. 2 - 2

5 of 14

www.diodes.com

October 2010

© Diodes Incorporated

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