BUK9504-40A 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
BUK9504-40A Datasheet PDF : 14 Pages
| |||
NXP Semiconductors
BUK9504-40A
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 30 V; Tj = 25 °C
400
8 76
ID
10
(A)
300
200
VGS = 5 V
03nd95
4
3
100
2.2
0
0
2
4
6
8
10
VDS (V)
5
RDSon
(mΩ)
4
3
2
3
6
Min Typ Max Unit
-
0.85 1.2 V
-
260 -
ns
-
531 -
nC
03nd94
9
12
15
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
100
gfs
(S)
80
03nd92
100
ID
(A)
80
03nd93
60
60
40
40
Tj = 175 °C
Tj = 25 °C
20
20
0
0
20
40
60
80
ID (A)
0
0
1
2
3
4
VGS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9504-40A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
7 of 14
Share Link: 