NXP Semiconductors
BUK9212-55B
N-channel TrenchMOS logic level FET
5
VGS
(V)
4
3
2
1
0
0
03no87
VDD = 14 V
VDD = 44 V
10
20
30
40
QG (nC)
6000
C
(pF)
Ciss
4000
2000
Coss
Crss
03no93
0
10−2
10−1
1
10
102
VDS (V)
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values
100
IS
(A)
75
Fig 14. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
03no31
50
Tj = 185 °C
Tj = 25 °C
25
0
0.0
0.3
0.6
0.9
1.2
VSD (V)
Fig 15. Source current as a function of source-drain voltage; typical values
BUK9212-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 3 February 2011
© NXP B.V. 2011. All rights reserved.
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