Silicon PNP Darlington Power Transistor
2SB1344
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL /
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ViBRiCEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
-100
V
ViBS,CBO Collector-Base Breakdown Voltage
lc= -50u A; lt= 0
-100
V
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; !B= -6mA
ICBO
Collector Cutoff Current
VCB=-100V: IE=0
-1.5
V
-10
MA
It BO
Emitter Cutoff Current
VEB= -5V; lc= 0
-3
mA
hf-b
DC Current Gain
lc= -2A; VCF= -3V '
1000
20000
COB
Output Capacitance
lE=0;VcB=-10V;fiest= 1MHz
90
PF
fi
Current-Gain—Bandwidth Product
!E= 0.5A; VCE= -5V; ftest= 10MHz
12
MHz