2N4401 데이터 시트보기 (PDF) - Central Semiconductor
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2N4401 Datasheet PDF : 4 Pages
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2N4400
2N4401
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4400 and
2N4401 are silicon NPN transistors designed for
general purpose amplifier and switching applications.
PNP complementary types are 2N4402 and 2N4403.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
60
40
6.0
600
625
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICEV
VCE=35V, VEB=0.4V
BVCBO
IC=0.1mA
BVCEO
IC=1.0mA
BVEBO
IE=0.1mA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=150mA
hFE
VCE=2.0V, IC=500mA
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
fT
VCE=10V, IC=20mA, f=100MHz
Cob
VCB=5.0V, IE=0, f=100kHz
Cib
VBE=0.5V, IC=0, f=100kHz
ton
VCC=30V, VEB(OFF)=2.0V, IC=150mA,
IB1=15mA
toff
VCC=30V, IC=150mA, IB1=IB2=15mA
2N4400
MIN MAX
-
100
60
-
40
-
6.0
-
-
0.40
-
0.75
0.75 0.95
-
1.2
-
-
20
-
40
-
50
150
20
-
20
250
200
-
-
6.5
-
30
-
35
-
255
2N4401
MIN MAX
-
100
60
-
40
-
6.0
-
-
0.40
-
0.75
0.75 0.95
-
1.2
20
-
40
-
80
-
100 300
40
-
40 500
250
-
-
6.5
-
30
-
35
-
255
UNITS
V
V
V
mA
mW
°C
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R2 (2-December 2014)
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