2SD905 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD905 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1400V (Min)
·High Reliability
APPLICATIONS
·Designed for high voltage power switching TV horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1400
V
VCEO
Collector-Emitter Voltage
650
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICP
Collector Current-Peak
10
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
20
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SD905
SPTECH website：www.superic-tech.com
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