2SC3063 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SC3063

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0

V(BR)EBO Emitter-Base Breakdown Vltage

IE= 10μA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA

VBE(on) Base-Emitter On Voltage

IC= 30mA; VCE= 10V

hFE

DC Current Gain

IC= 5mA; VCE= 50V

fT

Current-Gain—Bandwidth Product

IE= -20mA; VCE= 30V

COB

Output Capacitance

IE= 0; VCB= 30V, ftest= 1MHz

2SC3063

MIN TYP. MAX UNIT

300

V

300

V

7

V

1.5

V

1.2

V

50

250

70

MHz

2.4

pF

SPTECH website：www.superic-tech.com

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