2SD1632 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1632 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Base Breakdown Voltage-
: VCBO= 1300V (Min.)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
1300
V
VCES
Collector-Emitter Voltage
1300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
15
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.5
A
70
W
130
℃
Tstg
Storage Temperature Range
-55~130
℃
SPTECH website：www.superic-tech.com
2SD1632
1
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