2SC4580 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4580 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4580
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0
450
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 4A; IB= 0.8A
VeE(sat) Base-Emitter Saturation Voltage
lc= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
At rated Voltage
1.0
V
1.5
V
100 u A
ICEO
Collector Cutoff Current
At rated Voltage
100
nA
IEBO
Emitter Cutoff Current
At rated Voltage
100 u A
hpE-1
DC Current Gain
lc= 4A; VCE= 5V
10
hFE-2
DC Current Gain
lc=1mA; VCE=5V
5
fi
Current-Gain—Bandwidth Product
lc=0.8A;VcE=10V
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
|c= 4A, IB1= 0.8A; IB2=-1.6A
RL= 37.5 Q ; VBB2= 4V
0.5
us
2.0
(1 S
0.2
us
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