2SD1118 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
부품명
상세내역
제조사
2SD1118 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High DC Current Gain-
: hFE= 300V(Min.) @IC= 1A
·Low Collector Saturation Voltage
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid sate relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.5
℃/W
SPTECH website：www.superic-tech.com
2SD1118
1
Share Link: 