2SD1118 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1118 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD1118
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A
VB E(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 15V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
Switching times
MIN TYP. MAX UNIT
50
V
80
V
15
V
0.5
V
1.5
V
10 μA
100 μA
300 500
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= IB2= 0.5A;
RL= 6Ω; PW= 20μs; Duty≤2%
0.5 μs
3.0 μs
0.8 μs
SPTECH website：www.superic-tech.com
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