AD8610ARM 데이터 시트보기 (PDF) - Analog Devices

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AD8610ARM

Precision Very Low Noise Low Input Bias Current Wide Bandwidth JFET Operational Amplifiers

Analog Devices 

PRELIMINARY TECHNICAL DATA

ELECTRICALCHARACTERISTICS (@ VS= ±5.0V, VCM = 0V, TA=+25°C unless noted

Parameter

Symbol Conditions

Min

Typ

INPUT CHARACTERISTICS

Offset Voltage AD8610B

VO S

-40°C < TA < +125°C

Offset Voltage AD8610A

VO S

+25C°< TA < +125°C

-40°C < TA < +125°C

Input Bias Current

IB

-10

-40°C < TA < +85°C

-250

-40°C < TA < +125°C

-2.5

Input Offset Current

IO S

-10

-40°C < TA < +85°C

-75

-40°C < TA < +125°C

-150

Input Voltage Range

-2

Common-Mode Rejection Ratio

Large Signal Voltage Gain

Offset Voltage Drift AD8610B

Offset Voltage Drift AD8610A

CMRR

AVO

∆VOS/∆T

∆VOS/∆T

VCM = -1.5V to 2.5V

RL = 1 kΩ , Vo= -3V to 3V

-40°C < TA < +125°C

-40°C < TA < +125°C

90

95

100

200

0.3

0.3

OUTPUT CHARACTERISTICS

Output Voltage High

Output Voltage Low

VOH

RL = 1 kΩ, -40°C < TA < +125°C 3.8

VOL

RL = 1 kΩ, -40°C < TA < +125°C

Output Current

IOUT

VDropout < 1.2V

±15

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = ±5 V to ±13 V

100

110

Supply Current/Amplifier

ISY

VO = 0V

-40°C <TA < +125°C

DYNAMIC PERFORMANCE

Slew Rate

SR

RL =2 kΩ

40

50

Gain Bandwidth Product

GBP

25

Settling time

tS

AV=+1, 4V step, to 0.01%

350

NOISE PERFORMANCE

Voltage Noise

en p-p

0.1 Hz to 10 Hz

1.2

Voltage Noise Density

en

f = 1 kHz

6

Current Noise Density

in

f = 1 kHz

5

AD8610

Max Units

100 µV

200 µV

250 µV

350 µV

850 µV

10 pA

250 pA

2.5 nA

10 pA

75 pA

150 pA

3

V

dB

V/mV

1

µV/°C

3.5 µV/°C

V

-3.8 V

mA

dB

3000 µA

3500 µA

V/µs

MHz

ns

µV p-p

nV/√Hz

fA/√Hz

—2—

REV. Pr0 9/27/01

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