2SC3272 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

부품명

상세내역

제조사

2SC3272

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100μA; IB= 0

V(BR)EBO Emitter-Base Breakdown Vltage

IE= 50μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA

ICBO

Collector Cutoff Current

VCB= 200V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 10mA; VCE= 10V

fT

Current-Gain—Bandwidth Product

IE= -10mA; VCE= 30V

COB

Output Capacitance

IE= 0; VCB= 30V, ftest= 1MHz

 hFE Classifications

M

N

P

39-82 56-120 82-180

2SC3272

MIN TYP. MAX UNIT

300

V

300

V

5

V

2.0

V

0.5 μA

0.5 μA

39

180

50

MHz

3

pF

SPTECH website：www.superic-tech.com

2

Share Link: