ZXMP10A17GTA 데이터 시트보기 (PDF) - Unspecified

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ZXMP10A17GTA

P-Channel 100-V (D-S) MOSFET

Unspecified 

ZXMP10A17GTA

www.VBsemi.tw

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Static

Drain-Source Breakdown Voltage

VDS Temperature Coefficient

VGS(th) Temperature Coefficient

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Currenta

Drain-Source On-State Resistancea

Forward Transconductancea

Dynamicb

VDS

VDS/TJ

VGS(th)/TJ

VGS(th)

IGSS

IDSS

ID(on)

RDS(on)

gfs

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

VDS = VGS, ID = - 250 µA

VDS = 0 V, VGS = ± 20 V

VDS = - 100 V, VGS = 0 V

VDS = - 100 V, VGS = 0 V, TJ = 55 °C

VDS  - 5 V, VGS = - 10 V

VGS = - 10 V, ID = - 3 A

VGS = - 6 V, ID = - 2 A

VDS = - 15 V, ID = 3 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Ciss

Coss

Crss

Qg

VDS = - 35 V, VGS = 0 V, f = 1 MHz

VDS = - 50 V, VGS = - 10 V, ID = - 3 A

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

Fall Time

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Currenta

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Qgs

Qgd

Rg

td(on)

tr

td(off)

tf

td(on)

tr

td(off)

tf

IS

ISM

VSD

trr

Qrr

ta

tb

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

VDS = - 50 V, VGS = - 6 V, ID = - 3 A

f = 1 MHz

VDD = - 50 V, RL = 25 

ID  - 3 A, VGEN = - 6 V, Rg = 1 

VDD = - 50 V, RL = 25 

ID  - 3 A, VGEN = - 10 V, Rg = 1 

TC = 25 °C

IS = - 3 A

IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C

Min.

- 100

-2

-8

Typ.

- 165

- 6.6

0.200

0.230

12

819

51

32

17.5

13.2

3.4

6.4

6.1

10

55

20

15

11

18

32

20

- 0.8

65

180

45

20

Max.

Unit

-4

± 100

-1

- 10

V

mV/°C

V

nA

µA

A



S

pF

32

25

nC

9.2



20

95

40

30

ns

18

32

58

35

- 13

A

- 15

- 1.2

V

90

ns

270

nC

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

E-mail：China@VBsemi TEL:86-755-83251052

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