ADG5208F 데이터 시트보기 (PDF) - Analog Devices
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ADG5208F Datasheet PDF : 27 Pages
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ADG5208F/ADG5209F
Data Sheet
Parameter
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tD
Overvoltage Response Time, tRESPONSE
Overvoltage Recovery Time, tRECOVERY
Charge Injection, QINJ
Off Isolation
Channel-to-Channel Crosstalk
Adjacent Channels
Nonadjacent Channels
Total Harmonic Distortion Plus Noise,
THD + N
−3 dB Bandwidth
ADG5208F
ADG5209F
Insertion Loss
CS (Off )
CD (Off )
ADG5208F
ADG5209F
CD (On), CS (On)
ADG5208F
ADG5209F
POWER REQUIREMENTS
Normal Mode
IDD
IGND
ISS
Fault Mode
IDD
IGND
ISS
VDD
−40°C to
+25°C +85°C
180
230 245
175
225 245
105
135 150
105
60
80
1400
1900
−0.9
−75
85
2100
−75
−88
0.007
200
300
10.5
3
12
7
19
12
1.3
2
0.75
1.4
0.5
0.65
1.6
2.2
0.9
1.6
0.65
1.0
1 Guaranteed by design; not subject to production test.
−40°C to
+125°C
255
260
150
65
85
2200
2
1.4
0.7
2.3
1.7
1.1
8
44
Unit
Test Conditions/Comments
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
dB typ
% typ
MHz typ
MHz typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
RL = 1 kΩ, CL = 35 pF
VS = 18 V, see Figure 47
RL = 1 kΩ, CL = 35 pF
VS = 18 V, see Figure 46
RL = 1 kΩ, CL = 35 pF
VS = 18 V, see Figure 46
RL = 1 kΩ, CL = 35 pF
VS = 18 V, see Figure 45
RL = 1 kΩ, CL = 5 pF, see Figure 43
RL = 1 kΩ, CL = 5 pF, see Figure 44
VS = 18 V, RS = 0 Ω, CL = 1 nF, see Figure 48
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 40
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 42
RL = 10 kΩ, VS = 18 V p-p, f = 20 Hz to 20 kHz,
see Figure 39
RL = 50 Ω, CL = 5 pF, see Figure 41
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 41
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VDD = 39.6 V; VSS = 0 V; GND = 0 V; digital inputs =
0 V, 5 V, or VDD
mA typ
mA max
mA typ
mA max
mA typ
mA max
mA typ
mA max
mA typ
mA max
mA typ
mA max
V min
V max
VS = +55 V, −40 V
GND = 0 V
GND = 0 V
Rev. A | Page 10 of 27
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