BC847BHZG 데이터 시트보기 (PDF) - ROHM Semiconductor

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BC847BHZG

NPN General purpose transistor

ROHM Semiconductor 

BC847B HZG

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 Datasheet

Symbol

Values

Unit

VCBO

50

V

VCEO

45

V

VEBO

6

V

IC

100

mA

PD*1

200

mW

PD*2

350

mW

Tj

150

℃

Tstg

-65 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Collector-base breakdown

voltage

BVCBO IC = 50μA

Collector-emitter breakdown

voltage

BVCEO IC = 1mA

Emitter-base breakdown voltage BVEBO IE = 50μA

Collector cut-off current

ICBO

VCB = 30V

VCB = 30V, Ta = 150℃

Collector-emitter saturation voltage

VCE(sat)1 IC = 10mA, IB = 0.5mA

VCE(sat)2 IC = 100mA, IB = 5mA

Base-emitter turn

on voltage

VBE(on) VCE = 5V, IC = 10mA

DC current gain

hFE VCE = 5V, IC = 2mA

Transition frequency

fT

VCE = 5V, IE = -20mA,

f = 100MHz

Output capacitance

Cob

VCB = 10V, IE = 0A

f = 1MHz

Input capacitance

Cib

VBE = 0.5V, IC = 0A

f = 1MHz

Values

Unit

Min. Typ. Max.

50 -

-

V

45 -

-

V

6

-

-

V

-

-

15 nA

-

-

5 μA

-

- 250 mV

-

- 600 mV

580 - 770 mV

200 - 450 -

- 200 - MHz

- 3.0 - pF

- 8.0 - pF

*1 Each terminal mounted on a reference land.

*2 Mounted on a ceramic board(7.0×5.0×0.6mm ).

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20160617 - Rev.001

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