F2N60(V3) 데이터 시트보기 (PDF) - Unspecified
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F2N60 Datasheet PDF : 13 Pages
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2A 600V N-channel Enhancement Mode Power MOSFET
F2N60
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the
self-aligned planar technology which reduce the conduction loss,
improve switching performance and enhance the avalanche G
energy. Which accords with the RoHS standard.
1
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typical Data:8nC)
● Low Reverse Transfer Capacitances(Typical:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Used in Various Power Switching Circuit for System
Miniaturization and Higher Efficiency.
● Power Switch Circuit of Electron Ballast and Adaptor.
2D
VDSS = 600V
RDS(on) （TYP)= 4.0Ω
3S
ID = 2A
TO-220F
4 Electrical Characteristics
4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Maximum Drian-Source DC Voltage
Maximum Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Avalanche Energy Repetitive(Note 1)
Avalanche Current(Note 1)
Peak D5iode Recovery dv/dt(Note 6)
6
Total Dissipation
Ta=25℃
TC=25℃
Junction Temperature
Storage Temperature
Maximum Temperature for soldering
VDS
VGS
ID（T=25℃）
（T=100℃）
IDM
EAS
EAR
IAR
dv/dt
Ptot
Ptot
Tj
Tstg
TL
Value
600
±30
2
1.26
8
64
6.4
3.6
57
2
20
150
-55～150
300
Units
V
V
A
A
A
mJ
mJTitle
Size
AD
D ate:
File:
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8
W
W
℃
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ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 1 of 13
Rev. 1.0
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