ZTX758(1994) 데이터 시트보기 (PDF) - Diodes Incorporated.

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ZTX758
(Rev.:1994)

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Diodes Incorporated. 

ZTX758

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition

Frequency

fT

50

MHz IC=-20mA, VCE=-20V

f=20MHz

Output Capacitance

Cobo

20

pF

Switching times

ton

toff

140

ns

2000

ns

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

VCB=-20V, f=1MHz

IC=-100mA, VC=-100V

IB1=10mA, IB2=-20mA

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

Thermal Resistance:Junction to Ambient1

Junction to Ambient2

Junction to Case

Rth(j-amb)1

Rth(j-amb)2 †

Rth(j-case)

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

MAX.

175

116

70

UNIT

°C/W

°C/W

°C/W

2.5

2.0

1.5

1.0

0.5

AmbieCnat steemtemppeerraattuurree

0

-40 -20 0 20 40 60 80 100 120 140 160 180 200

T -Temperature (°C)

Derating curve

200

D=1 (D.C.)

t1 D=t1/tP

tP

100

D=0.5

D=0.2

D=0.1

Single Pulse

0

0.0001 0.001 0.01 0.1

1

10

100

Pulse Width (seconds)

Maximum transient thermal impedance

3-268

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