MTV16N50E 데이터 시트보기 (PDF) - Motorola => Freescale

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MTV16N50E

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount

Motorola => Freescale 

MTV16N50E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

500

—

—

520

Vdc

—

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0 Vdc)

(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

250

—

—

1000

—

—

100

nAdc

VGS(th)

Vdc

2.0

3.2

4.0

—

7.0

—

mV/°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 8.0 Adc)

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 16 Adc)

(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 250 Vdc, ID = 16 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 16 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 16 Adc, VGS = 0 Vdc)

(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.32

0.40

Ohm

Vdc

—

—

6.7

—

—

5.6

5.0

—

—

mhos

—

3200

4480

pF

—

400

560

—

320

448

—

28

60

ns

—

80

160

—

80

160

—

60

120

—

65

—

nC

—

17

—

—

47

—

—

34

—

Vdc

—

1.0

1.6

—

0.9

—

Reverse Recovery Time

(IS = 16 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

390

—

ns

—

245

—

—

145

—

—

5.35

—

µC

nH

—

5.0

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

nH

—

13

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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